PART |
Description |
Maker |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSGYE230R4 FSGYE230D1 FSGYE230R FSGYE230R3 FN4853 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR11 |
From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851 |
From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSYE913A0R3 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
FSL923A0R3 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A |
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
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INTERSIL[Intersil Corporation] Intersil, Corp.
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